Nanocrystalline Au: SnO2 Thin Films Grown by DC Reactive Magnetron Sputtering
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چکیده
منابع مشابه
AlNXOY THIN FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING
AlNxOy thin films were produced by DC reactive magnetron sputtering, using an atmosphere of argon and a reactive gas mixture of nitrogen and oxygen, for a wide range of partial pressures of reactive gas. During the deposition, the discharge current was kept constant and the discharge parameters were monitored. The deposition rate, chemical composition, morphology, structure and electrical resis...
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The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters (N2/H2/Arflow rates, RF power, and substrate temperatures). Si (100) and fused silica substrates were used at relatively low temperatures (Ts ≤ 420K). The main effects resulting from the depo...
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We have deposited weakly textured substoichiometric NbB2-x thin films by magnetron sputtering from a NbB2 target. The films exhibit superhardness (42 ± 4 GPa), previously only observed in overstoichiometric TiB2 thin films, and explained by a self-organized nanostructuring, where thin TiB2 columnar grains hinder nucleation and slip of dislocations and a B-rich tissue phase between the grains pr...
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Sputter deposition process is another old technique being used in modern semiconductor industries. Sputtering is a process that can deposit TiO2 material on wafer/glass substrates. In this process target is connected to negative high voltage. Further argon gas is introduced into the chamber and is ionized to a positive charge. The positively charged argon atoms are attracted and strike the nega...
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Thin films of the recently discovered magnesium diboride (MgB2) intermetallic superconducting compound have been grown using a magnetron sputtering deposition technique followed by in-situ annealing at 830°C. High quality films were obtained on both sapphire and MgO substrates. The best films showed maximum Tc = 35 K (onset), a transition width of 0.5 K, a residual resisitivity ratio up to 1.6,...
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ژورنال
عنوان ژورنال: International Journal of Engineering Research and Applications
سال: 2017
ISSN: 2248-9622,2248-9622
DOI: 10.9790/9622-0707082529